<^e,mi-(-.on.au.ci oi , una. high speed npn power darlington transistors ge6060,1,2 400-500 volts 20 amp, 125 watts these devices are designed for use in high speed switching applications, such as off-line switching power supplies, ac & dc motor control, ups systems, ultrasonic equipment and other high frequency power conversion equipment. device circuit (to-3) dimensions am ik inchcs and (miu.imiteh?) 0.545(21 4;'| t max i dia h ?,?,. t ??'? 3mi9.m) max seating plane - 4261 10 82) win case temp reference point 20(500) emitter base q 16z(409( 01si384) 2 holes maximum ratings (tc= 25 c) (unless otherwise noted) rating collector-base voltage collector-emitter voltage emitter base voltage collector current ? continuous peak (repetitive) peak (non-repetitive) base current ? continuous peak (non-repetitive) total power dissipation @ tc = 25ec operating and storage junction temperature range symbol vcbo vceo vebo ,'c 'cm icsm ib ibm pd tj, tstg ge6060 400 350 5 20 25 42.5 4 6 125 -65 to +150 ge6061 450 400 5 20 25 42.5 4 6 125 -65to+150 GE6062 500 450 5 20 25 42.5 4 6 125 -65 to +150 units volts volts volts a a watts c thermal characteristics thermal resistance, junction to case maximum lead temperature for soldering purposes: 14" from case for 5 seconds rsjc tl 1 300 1 300 1 300 c/w c quality semi-conductors
electrical characteristics (tc= 25 c) (unless otherwise specified) characteristic | symbol min typ max unit off characteristics collector-emitter sustaining voltage ge6060 (1c = -5ma) qe6061 (vdamp = vceo rated) qe6062 collector-base voltage ge6060 (lc = 0.25ma) ge6061 GE6062 collector cutoff current (vcb = vcbo rated) emitter cutoff current (veb=1.5v,lc = 0) vceo(sus) vcbo icbo 'ebo 350 400 450 400 450 500 __ ? ? ? ? ? ? 0.25 200 volts volts ma ma second breakdown second breakdown with base forward biased clamped inductive soa with base reversed bias fbsoa rbsoa see figure 14 see figure 17 on characteristics dc current gain (ic=10a,vce=5v) (lc = 15a, vce = 5v) (lc = 20a, vce = 5v) collector-emitter saturation voltage (lc = 10a, ib = 1a) (lc = 10a, ib = 2a) (1c = 20a, ib = 2a) base-emitter voltage (lc = 5a. ib = .5a) (lc = 20a, ib = 2a) hfe vce(sat) vbe(sat) 40 30 10 ? 160 115 65 1.2 1.15 1.6 1.95 2.3 ? 1.5 1.4 2 2.5 3.5 ? v v switching characteristics resistive load rise time storage time fall time vcc = 300v, tp = 50 ms lc = 15a, ib1 = 1.5a, ibs = 2.25a inductive load, clamped storage time crossover time fall time vcc = 300v, l = 100 /ih 1c = 15a, ib1 = 1.5a, ib2 = 2.25a tr ts tt ts tc tf ? _ ? ? ? ? 0.3 2.3 0.5 2.6 0.5 0.12 i o4 2.5 1.0 ? _ ? ms ms emitter-collector diode characteristics forward voltage if = ida if = 25a vf ? ? 1.9 2.8 ? ? volts
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